? semiconductor components industries, llc, 2007 november, 2007 - rev. 8 1 publication order number: 2n6040/d pnp - 2n6040, 2n6042, npn - 2n6043, 2n6045 2n6043 and 2n6045 are preferred devices plastic medium-power complementary silicon transistors plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching applications. features ? high dc current gain - h fe = 2500 (typ) @ i c = 4.0 adc ? collector-emitter sustaining voltage - @ 100 madc - v ceo(sus) = 60 vdc (min) - 2n6040, 2n6043 = 100 vdc (min) - 2n6042, 2n6045 ? low collector-emitter saturation voltage - v ce(sat) = 2.0 vdc (max) @ i c = 4.0 adc - 2n6043,44 = 2.0 vdc (max) @ i c = 3.0 adc - 2n6042, 2n6045 ? monolithic construction with built-in base-emitter shunt resistors ? epoxy meets ul 94 v-0 @ 0.125 in ? esd ratings: human body model, 3b > 8000 v machine model, c > 400 v ? pb-free packages are available* ??????????????????? ??????????????????? maximum ratings (note 1) ???????????? ???????????? rating ??? ??? ???? ???? ??? ??? ???????????? ???????????? ???????????? ???????????? collector-emitter voltage 2n6040 2n6043 2n6042 2n6045 ??? ??? ??? ??? ???? ???? ???? ???? ??? ??? ??? ??? ???????????? ???????????? ???????????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? ???????????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? ???????????? c derate above 25 c ??? ??? ??? ???? ???? ???? ??? ??? ??? c ???????????? ???????????? ??? ??? ???? ???? ??? ??? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. indicates jedec registered data. *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to-220ab case 221a-09 style 1 marking diagram 2n604x = device code x = 0, 2, 3, or 5 a = assembly location y = year ww = work week g = pb-free package http://onsemi.com darlington, 8 amperes complementary silicon power transistors 60 - 100 volts, 75 watts preferred devices are recommended choices for future use and best overall value. 2n604xg ayww see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information
pnp - 2n6040, 2n6042, npn - 2n6043, 2n6045 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? ??????????????????????? ??????????????????????? ???? ???? ?????? ?????? ??? ??? ??????????????????????? ??????????????????????? thermal resistance, junction-to-case ???? ???? jc ?????? ?????? ??? ??? c/w ??????????????????????? ??????????????????????? ???? ???? ja ?????? ?????? ??? ??? c/w ????????????????????????????????? ????????????????????????????????? *electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? collector-emitter sustaining voltage (i c = 100 madc, i b = 0) 2n6040, 2n6043 2n6042, 2n6045 ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? a ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? c) 2n6040, 2n6043 (v ce = 80 vdc, v be(off) = 1.5 vdc, t c = 150 c) 2n6041, 2n6044 (v ce = 100 vdc, v be(off) = 1.5 vdc, t c = 150 c) 2n6042, 2n6045 ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? ??? ??? ??? ??? ??? ??? a ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? a ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? dc current gain (i c = 4.0 adc, v ce = 4.0 vdc) 2n6040, 2n6043, (i c = 3.0 adc, v ce = 4.0 vdc) 2n6042, 2n6045 (i c = 8.0 adc, v ce = 4.0 vdc) all types ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? ??????????????????????? small signal current gain (i c = 3.0 adc, v ce = 4.0 vdc, f = 1.0 mhz) ???? ???? ???? ???? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ???
pnp - 2n6040, 2n6042, npn - 2n6043, 2n6045 http://onsemi.com 3 80 0 0 20 40 60 80 100 120 160 figure 1. power derating t, temperature ( c) p d , power dissipation (watts) 40 20 60 140 t c 4.0 0 2.0 1.0 3.0 t a t a t c figure 2. switching times equivalent circuit 5.0 0.1 figure 3. switching times i c , collector current (amp) t, time (s) 2.0 1.0 0.5 0.05 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 0.3 0.7 t f t r t s t d @ v be(off) = 0 v v 2 approx +8.0 v v 1 approx -12 v t r , t f 10 ns duty cycle = 1.0% 25 s 0 r b 51 d 1 +4.0 v v cc -30 v r c tut 8.0 k 120 scope for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities and d1. r b & r c varied to obtain desired current levels d 1 must be fast recovery type, eg: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 3.0 0.2 0.1 0.07 5.0 7.0 v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c pnp npn figure 4. thermal response t, time or pulse width (ms) 1.0 0.01 0.01 0.5 0.2 0.1 0.05 0.02 r(t), effective transient thermal resist ance (normalized) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100 0 500 jc (t) = r(t) jc jc = 1.67 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.1 0.7 0.3 0.07 0.03 0.02 0.03 0.3 3.0 30 300 single pulse 0.01
pnp - 2n6040, 2n6042, npn - 2n6043, 2n6045 http://onsemi.com 4 20 1.0 figure 5. active-region safe operating area v ce , collector-emitter voltage (volts) 10 5.0 2.0 1.0 0.02 2.0 3.0 7.0 50 100 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited 70 i c , collector current (amp) t j = 150 c dc 1.0ms 100 s 0.5 0.2 0.05 5.0 2n6040, 2n6043 2n6045 0.1 10 20 30 500 s 5.0ms curves apply below rated v ceo there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c - v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 300 figure 6. small-signal current gain v r , reverse voltage (volts) 30 0.5 1.0 2.0 100 5.0 0.1 0.2 c, capacitance (pf) 200 70 50 t j = 25 c c ib 100 c ob pnp npn 10,000 1.0 figure 7. capacitance f, frequency (khz) 10 2.0 5.0 20 50 1000 100 10 10 20 h fe , s mall- s i g nal c urrent g ain 5000 3000 2000 1000 500 300 200 100 50 30 20 200 500 pnp npn t c = 25 c v ce = 4.0 vdc i c = 3.0 adc 50 20,000 0.1 figure 8. dc current gain i c , collector current (amp) 200 0.2 0.3 0.5 1.0 2.0 10 h fe , dc current gain 0.7 7.0 pnp 2n6040, 2n6042 npn 2n6043, 2n6045 10,000 t j = 150 c 25 c -55 c i c , collector current (amp) h fe , dc current gain v ce = 4.0 v t j = 150 c 25 c -55 c 7000 5000 3000 2000 1000 700 500 300 3.0 5.0 v ce = 4.0 v 20,000 0.1 200 0.2 0.3 0.5 1.0 2.0 10 0.7 7.0 10,000 7000 5000 3000 2000 1000 700 500 300 3.0 5.0
pnp - 2n6040, 2n6042, npn - 2n6043, 2n6045 http://onsemi.com 5 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) figure 9. collector saturation region 3.0 0.3 i b , base current (ma) 1.0 0.5 1.0 2.0 10 30 1.8 i c = 2.0 a t j = 25 c 4.0 a 2.2 2.6 0.7 5.0 20 1.4 6.0 a i b , base current (ma) t j = 25 c 3.0 7.0 i c = 2.0 a 4.0 a 6.0 a 3.0 0.3 1.0 0.5 1.0 2.0 10 30 1.8 2.2 2.6 0.7 5.0 20 1.4 3.0 7.0 3.0 0.1 i c , collector current (amp) 0.2 0.3 0.5 0.7 1.0 3.0 10 2.5 2.0 1.5 1.0 0.5 t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 v, voltage (volts) v be @ v ce = 4.0 v 2.0 i c , collector current (amp) v, voltage (volts) 7.0 5.0 3.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 10 2.5 2.0 1.5 1.0 0.5 2.0 7.0 5.0 t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 v be @ v ce = 4.0 v figure 10. on voltages ordering information device package shipping 2n6040 to-220ab 50 units / rail 2n6040g to-220ab (pb-free) 2n6042 to-220ab 2n6042g to-220ab (pb-free) 2n6043 to-220ab 2n6043g to-220ab (pb-free) 2n6045 to-220ab 2n6045g to-220ab (pb-free)
pnp - 2n6040, 2n6042, npn - 2n6043, 2n6045 http://onsemi.com 6 package dimensions to-220 case 221a-09 issue ae notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane -t- c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each custom er application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 2n6040/d literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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